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PSMN2R2-40YSDX Datasheet
Datasheet specifications
| Datasheet's name | PSMN2R2-40YSDX |
|---|---|
| File size | 72.536 KB |
| File type | |
| Number of pages | 13 |
Download Datasheet PSMN2R2-40YSDX |
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Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN2R2-40YSDX
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 166W
- Total Gate Charge (Qg@Vgs): 63nC@10V
- Drain Source Voltage (Vdss): 40V
- Input Capacitance (Ciss@Vds): 5130pF@20V
- Continuous Drain Current (Id): 180A
- Gate Threshold Voltage (Vgs(th)@Id): 3.6V@1mA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.2mΩ@25A,10V
- Package: SOT-669
- Manufacturer: Nexperia
